Image Sensor Manufacturing Methods
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMu-Han Cheng, Kuo-Hsiu Wei, Kei-Wei Chen, Ying-Lang Wang
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Abstract
Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece, the workpiece having a front side and a back side opposite the front side;
- forming an integrated circuit on the front side of the workpiece;
- and
- forming a grid comprising a conductive material on the back side of the workpiece using a damascene process.
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece, the workpiece having a front side and a back side opposite the front side;
- forming an integrated circuit on the front side of the workpiece;
- forming an insulating material over the back side of the workpiece;
- patterning the insulating material;
- forming a conductive material over the patterned insulating material;
- and
- removing the conductive material from over a top surface of the patterned insulating material, forming a grid of the conductive material within the patterned insulating material.
A method of manufacturing a back side illumination (BSI) sensor, the method comprising:
- providing a workpiece having a front side and a back side opposite the front side;
- forming an integrated circuit comprising an array of back side illumination sensors on the front side of the workpiece;
- forming a first insulating material over the back side of the workpiece;
- patterning the first insulating material, forming patterns in the first insulating material;
- forming a metal over the first insulating material, filling the patterns in the first insulating material with the metal;
- removing the metal from over a top surface of the first insulating material using a chemical-mechanical polishing (CMP) process, forming a grid of the metal within the patterns in the first insulating material;
- forming a second insulating material over the first insulating material and the grid of the metal;
- forming a color filter material over the second insulating material;
- and
- forming a lens material over the color filter material.
Dependencies are inferred from the claim text.