Process for the production of photovoltaic cells

Abstract

The present invention is related to a process for the manufacturing of a photovoltaic cell comprising the steps of:—providing a semiconductor substrate said semiconductor substrate comprising an insulating layer on its top surface;—implanting semiconductor ions selected from the group consisting of silicon, germanium and their mixture by ionic implantation in the insulating layer for obtaining an implanted insulating layer, the ionic implantation fluence being higher than 1.1017at./cm2, the maximum semiconductor concentration in the insulating layer after implantation being higher than the solubility of the semiconductor in the insulating layer;—thermally treating the implanted insulating layer for inducing the precipitation of the semiconductor into quantum dots;—depositing at least two conducting contacts for collecting, in use, the generated current.

Dependencies are inferred from the claim text.