Method for Creating Semiconductor Junctions with Reduced Contact Resistance
AssigneeEvident Technologies
InventorsClinton T. Ballinger, Susanthri Perera, Adam Z. Peng
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Abstract
Embodiments of the invention relate generally to creating semiconductor junctions with reduced contact resistance. In one embodiment, the invention provides a method of forming a composition of material, the method comprising: providing at least two populations of semiconducting materials; layering the at least two populations of semiconducting materials to form at least two layers; and consolidating the at least two populations of semiconducting materials, wherein the consolidating creates an electrical connection between the at least two layers.
Claims19
A method of forming a composition of material, the method comprising:
- providing at least two populations of semiconducting materials;
- layering the at least two populations of semiconducting materials to form at least two layers;
- and
- consolidating the at least two populations of semiconducting materials, wherein the consolidating creates an electrical connection between the at least two layers.
A method of forming a composition of material, the method comprising:
- providing a population of a semiconducting material and a population of a metal material;
- layering the population of the semiconducting material and the population of the metal material;
- and
- consolidating the layered materials to form at least two layers, wherein the consolidating creates an electrical connection between at least two layers.
A consolidated material, the consolidated material comprising:
- at least two populations of semiconducting materials, wherein the at least two populations of semiconducting materials are arranged in at least two alternating layers.
A consolidated material, the consolidated material comprising:
- a population of a semiconducting material and a population of a metal material, wherein the population of the semiconducting material and the population of the metal material are arranged in at least two alternating layers.
Dependencies are inferred from the claim text.