Methods and apparatus for heat spreader on silicon

A method for fabricating a structure for semi-conductor package, comprising:

• forming a dielectric layer in contact with a first surface of the substrate;
• forming a passivation layer on the dielectric layer, wherein the passivation layer has an opening;
• forming a connection pad at the opening in the passivation layer;
• forming a protection film on top of the passivation layer and the connection pad;
• forming a heat spreader layer in contact with a second surface of the substrate;
• and
• removing the protection film.

A structure for a semi-conductor package, comprising:

• a chip connected to a connection pad by way of a bump or a solder ball, wherein the connection pad is located in an opening of a passivation layer;
• a dielectric layer in contact with the passivation layer;
• a substrate with a first surface in contact with the dielectric layer;
• and
• a heat spreader layer in contact with a second surface of the substrate.