Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Hee LIM, Chan-Seung HWANG
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes first and second storage electrodes formed to be spaced apart from each other on a substrate, an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes, a storage dielectric layer formed to cover the first and second storage electrodes and the continuous support pattern, and a plate electrode formed on the storage dielectric layer. The continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other.
Claims16
A semiconductor device comprising:
- first and second storage electrodes formed to be spaced apart from each other on a substrate;
- an insulating continuous support pattern connected to top surfaces of the first and second storage electrodes;
- a storage dielectric layer formed on the first and second storage electrodes and the continuous support pattern;
- and
- a plate electrode formed on the storage dielectric layer,
- wherein the continuous support pattern includes a first contact part connected to the top surface of the first storage electrode, a second contact part connected to the top surface of the second storage electrode, and a connection part connecting the first and second contact parts with each other.
A semiconductor device comprising:
- a substrate;
- a first storage electrode and a first insulating pattern sequentially stacked on the substrate;
- a second storage electrode and a second insulating pattern sequentially stacked on the substrate;
- a lower plate electrode which surrounds sides of the first storage electrode and first insulating pattern and sides of the second storage electrode and second insulating pattern;
- an upper plate electrode which is formed on the lower plate electrode and the first and second insulating patterns and which includes a material with a lower resistivity than a resistivity of the lower plate electrode;
- and
- a storage dielectric layer interposed between the lower plate electrode and the first storage electrode, between the lower plate electrode and the first insulating pattern, between the lower plate electrode and the second storage electrode, between the lower plate electrode and the second insulating pattern, and between the lower plate electrode and the substrate.
16-20. (canceled)
Dependencies are inferred from the claim text.