Replacement gate structures for semiconductor devices
AssigneeGlobalfoundries Inc.
InventorsDina Triyoso, Hao Zhang
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Abstract
The present disclosure is generally directed to various replacement gate structures for semiconductor devices. One illustrative gate structure disclosed herein includes, among other things, a gate insulation layer and a layer of gate electrode material with a substantially horizontal portion having a first thickness and a substantially vertical portion having a second thickness that is less than the first thickness. Furthermore, the substantially horizontal portion of the layer of gate electrode material is positioned adjacent to a bottom of the replacement gate structure and above at least a portion of the gate insulation layer, and the substantially vertical portion is positioned adjacent to sidewalls of the replacement gate structure.
Claims20
-22. (canceled)
A replacement gate structure, comprising:
- a gate insulation layer;
- and
- a layer of gate electrode material comprising a substantially horizontal portion having a first thickness and a substantially vertical portion having a second thickness that is less than said first thickness, wherein said substantially horizontal portion is positioned adjacent to a bottom of said replacement gate structure and above at least a portion of said gate insulation layer, and wherein said substantially vertical portion is positioned adjacent to sidewalls of said replacement gate structure.
A replacement metal gate structure of a transistor device, the replacement metal gate structure comprising:
- a gate insulation layer comprising a high-k dielectric material, said gate insulation layer comprising a substantially horizontal portion positioned above a channel region of said transistor device and a substantially vertical portion positioned along sidewalls of said replacement metal gate structure;
- a first metal layer comprising a substantially horizontal portion positioned above said substantially horizontal portion of said gate insulation layer and a substantially vertical portion positioned adjacent to said substantially vertical portion of said gate insulation layer, wherein a thickness of said substantially vertical portion of said first metal layer is less than or equal to approximately one-half of a thickness of said substantially horizontal portion of said first metal layer;
- and
- a conductive metal gate electrode fill material positioned above said substantially horizontal portion of said first metal layer and adjacent to said substantially vertical portion of said first metal layer.
Dependencies are inferred from the claim text.