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US 2013/0270641 A1Published application
Methods of forming finfet semiconductor devices so as to tune the threshold voltage of such devices
AssigneeGlobalfoundries Inc.
InventorMin-Hwa Chi
Life of this patent
Estimating the term…
Abstract
Disclosed herein are various methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate to define at least one fin (or fins) for the device, prior to forming a gate structure above the fin (or fins), performing a first epitaxial growth process to grow a first semiconductor material on exposed portions of the fin (or fins) and forming the gate structure above the first semiconductor material on the fin (or fins).
Claims47
A method of forming a FinFET device, comprising:
- forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining at least one fin comprised of said semiconducting substrate for said device;
- forming a layer of insulating material in said trenches, wherein an exposed portion of said fin extends above an upper surface of said layer of insulating material;
- prior to forming a gate structure above said at least one fin, performing a first epitaxial growth process to grow a first semiconductor material on at least a portion of said exposed portion of said at least one fin;
- and
- forming said gate structure above said first semiconductor material on said at least one fin.
2 more elements
A method of forming a FinFET device, comprising:
- forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;
- forming a layer of insulating material in said trenches, wherein an exposed portion of each of said plurality of fins extends above an upper surface of said layer of insulating material;
- prior to forming a gate structure above said plurality of fins, performing a first epitaxial growth process to grow a first semiconductor material on at least a portion of said exposed portion of each of said plurality of fins, wherein said first semiconductor material is formed at least at a location on each of said plurality of fins where at least a portion of said gate structure will be formed thereabove;
- and
- forming said gate structure above said first semiconductor material.
2 more elements
A method of forming a FinFET device, comprising:
- forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;
- forming a layer of insulating material in said trenches, wherein an exposed portion of each of said plurality of fins extends above an upper surface of said layer of insulating material;
- prior to forming a gate structure above said plurality of fins:
- performing a first epitaxial growth process to grow a first semiconductor material on at least portions of said exposed portion of each of said plurality of fins, wherein said first semiconductor material is formed at least at a location on each of said plurality of fins where at least a portion of said gate structure will be formed thereabove;
- and
- performing a second epitaxial growth process to grow a second semiconductor material on at least said first semiconductor material on each of said plurality of fins;
- and
- forming said gate structure above said first and second semiconductor materials.
5 more elements
A method of forming a FinFET device, comprising:
- forming a plurality of spaced-apart trenches in a semiconducting substrate, said trenches defining a plurality of fins comprised of said semiconducting substrate for said device;
- forming a layer of insulating material in said trenches, wherein an exposed portion of said fins extends above an upper surface of said layer of insulating material;
- forming a hard mask layer that covers said exposed portion of at least one of said plurality of fins but leaves at least one other of said plurality of fins exposed for further processing;
- and
- performing a first epitaxial growth process through said hard mask layer to grow a first semiconductor material on said at least one other of said plurality of fins exposed for further processing.
2 more elements
A FinFET device, comprising:
- a fin comprised of a semiconducting substrate;
- a first semiconductor layer positioned on at least sidewalls of said fin;
- a gate insulation layer positioned above said first semiconductor layer;
- and
- a gate electrode positioned above said gate insulation layer.
2 more elements
A FinFET device, comprising:
- a first fin and a second fin, each of which are comprised of a semiconducting substrate, said first fin having a bare semiconducting substrate surface;
- a first semiconductor layer positioned on at least sidewalls of said second fin;
- a gate insulation layer positioned above said bare semiconducting substrate surface of said first fin and said first semiconductor layer on said second fin;
- and
- a gate electrode positioned above said gate insulation layer.
2 more elements
A FinFET device, comprising:
- a first fin and a second fin, each of which are comprised of a semiconducting substrate,
- a first semiconductor layer positioned on at least sidewalls of said first and second fins;
- a second semiconductor layer positioned above said first semiconductor layer on said second fin;
- a gate insulation layer positioned above said first semiconductor layer of said first fin and above said first semiconductor layer and said second semiconductor layer of said second fin;
- and
- a gate electrode positioned above said gate insulation layer.
3 more elements
Dependencies are inferred from the claim text.