Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBi-o KIM, Jin-tae NOH, Chang-woo SUN, Jae-young AHN, Seung-hyun LIM, Ki-hyun HWANG
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Abstract
A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.
Claims15
A semiconductor device comprising:
- a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution;
- a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction;
- and
- a gate dielectric layer disposed between the channel region and the gate electrodes, wherein the nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.
15-32. (canceled)
Dependencies are inferred from the claim text.