Light emitting device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsChisato Furukawa, Takafumi Nakamura
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Abstract
A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.
Claims1
A light emitting device comprising:
- a light emitting layer made of semiconductor;
- an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode;
- and
- a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.
Dependencies are inferred from the claim text.