US 2013/0260575 A1 · SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS

Abstract

A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a reaction chamber gaseous reagents comprising a porogenated precursor; optionally a structure former precursor selected from the group consisting an organosilane, an organosiloxane, and combinations thereof; and optionally a porogen precursor; applying an energy source to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film at least a portion of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.

Claims18

Dependent claims

A chemical vapor deposition method for producing a porous organosilica glass film represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, said method comprising:

providing a substrate within a reaction chamber;
introducing into the reaction chamber reagents comprising a porogenated precursor comprising a silicon atom bonded to a porogen;
optionally a structure former precursor selected from the group consisting of an organosilane and an organosiloxane;
and optionally a porogen precursor wherein the porogen in the porogenated precursor comprises 10 carbon atoms or less;
applying at least one energy source to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen;
and
removing from the preliminary film at least a portion of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.

4 more elements

A composition for depositing porous low dielectric constant film comprising:

(a)(i) a porogenated precursor selected from the group consisting of:
octyltriethoxysilane, octyltrimethoxysilane, cyclooctyltriethoxysilane, cyclooctyltrimethoxysilane, octyltrimethoxysilane, octnyltriethoxysilane, hexyltriethoxysilane, isobutyltriethoxysilane, methylcyclohexyldiethoxysilane, cyclooctyltriethoxysilane, butyltriethoxysilane, cyclohexanetrimethoxysilane, cyclohexyltrimethoxysilane, cyclohexylmethyldimethoxysilane, neobutyltriethoxysilane, cyclopentyltriethoxysilane, cyclopentylmethyltriethoxysilane, (5-bicycloheptenyl)triethoxysilane, (5-bicycloheptenyl)methyldiethoxysilane, (5-bicycloheptenyl)dimethylethoxysilane, (5-bicycloheptenyl)trimethylsilane, (5-bycloheptyl)methyldiethoxysilane, (5-bicycloheptyl)dimethylethoxysilane, (5-bicycloheptyl)trimethylsiane, (5-bicycloheptyl)dimethylchlorosilane, cyclohexylmethyldimethoxysilane, isobutylmethyldimethoxysilane, 1-[2-(trimethoxysilyl)ethyl]cyclohexane-3,4-epoxide, 1,1, -dimethyl-1-silacyclopentane, (2-cyclohexen-1-yloxy)trimethylsilane, (cyclohexyloxy)trimethylsilane, 2,4-cyclopentadie-1-yltrimethylsilane, 1,1-dimethylsilacyclohexane, and combinations thereof;
(a)(ii) a structure former precursor selected from the group consisting of diethoxymethylsilane, dimethoxymethylsilane, di-isopropoxymethylsilane, di-t-butoxymethylsilane, methyldiethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, methyltri-isopropoxysilane, methyltri-t-butoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethylethoxysilane, dimethyldi-isopropoxysilane, dimethyldi-t-butoxysilane, tetraethoxysilane, methylsilane, dimethylsilane, trim ethylsilane, tetramethylsilane, phenylsilane, cyclohexylsilane, tert-butylsilane, ethylsilane, diethylsilane, methyltriacetoxysilane, methyldiacetoxysilane, methylethoxydisiloxane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethyldiacetoxysilane, bis(trimethoxysilyl)methane, bis(dimethoxysilyl)methane, tetraethoxysilane, triethoxysilane, trimethylphenoxysilane, phenoxysilane, ditertbutylsilane, diethyoxysilane and mixtures thereof;
and
(b) a porogen precursor selected from the group consisting of:
alpha-terpinene, limonene, cyclohexane, cyclooctene, cycloheptene, cyclooctane, cyclooctadiene, cycloheptane, cycloheptadiene, cycloheptatriene, 1,2,4-trimethylcyclohexane, 1,5-dimethyl-1,5-cyclooctadiene, camphene, adamantane, 1,3-butadiene, gamma-terpinene, dimethylhexadiene, ethylbenzene, decahydronaphthalene, 2-carene, 3-carene, vinylcyclohexene and dimethylcyclooctadiene, substituted dienes, bicycloheptadiene (BCHD), and decahydronaphthele.

3 more elements

A composition for depositing porous low dielectric constant film comprising:

(a)(i) a porogenated precursor selected from the group consisting of:
octyltriethoxysilane, octyltrimethoxysilane, cyclooctyltriethoxysilane, cyclooctyltrimethoxysilane, octyltrimethoxysilane, octnyltriethoxysilane, hexyltriethoxysilane, isobutyltriethoxysilane, methylcyclohexyldiethoxysilane, cyclooctyltriethoxysilane, butyltriethoxysilane, cyclohexanetrimethoxysilane, cyclohexyltrimethoxysilane, cyclohexylmethyldimethoxysilane, neobutyltriethoxysilane, cyclopentyltriethoxysilane, cyclopentylmethyltriethoxysilane, (5-bicycloheptenyl)triethoxysilane, (5-bicycloheptenyl)methyldiethoxysilane, (5-bicycloheptenyl)dimethylethoxysilane, (5-bicycloheptenyl)trimethylsilane, (5-bycloheptyl)methyldiethoxysilane, (5-bicycloheptyl)dimethylethoxysilane, (5-bicycloheptyl)trimethylsiane, (5-bicycloheptyl)dimethylchlorosilane, cyclohexylmethyldimethoxysilane, isobutylmethyldimethoxysilane, 142-(trimethoxysilyl)ethyl]cyclohexane-3,4-epoxide, 1,1, -dimethyl-1-silacyclopentane, (2-cyclohexen-1-yloxy)trimethylsilane, (cyclohexyloxy)trimethylsilane, 2,4-cyclopentadie-1-yltrimethylsilane, 1,1-dimethylsilacyclohexane, and combinations thereof;
and
(a)(ii) a structure former precursor selected from the group consisting of diethoxymethylsilane, dimethoxymethylsilane, di-isopropoxymethylsilane, di-t-butoxymethylsilane, methyldiethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, methyltri-isopropoxysilane, methyltri-t-butoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, dimethylethoxysilane, dimethyldi-isopropoxysilane, dimethyldi-t-butoxysilane, tetraethoxysilane, methylsilane, dimethylsilane, trim ethylsilane, tetramethylsilane, phenylsilane, cyclohexylsilane, tert-butylsilane, ethylsilane, diethylsilane, methyltriacetoxysilane, methyldiacetoxysilane, methylethoxydisiloxane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethyldiacetoxysilane, bis(trimethoxysilyl)methane, bis(dimethoxysilyl)methane, tetraethoxysilane, triethoxysilane, trimethylphenoxysilane, phenoxysilane, ditertbutylsilane, diethyoxysilane and mixtures thereof.

1 more element

Dependencies are inferred from the claim text.

Silicon precursors and compositions comprising same for depositing low dielectric constant films

Life of this patent

Silicon precursors and compositions comprising same for depositing low dielectric constant films

Life of this patent

Abstract

Claims18