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US 2013/0260565 A1Published application
Method to form convex structure on surface of semiconductor material
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsYoshifumi Nishimoto, Ryuji Yamabi
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Abstract
A process to form a lens on a semiconductor material is disclosed. The process includes steps of: forming double layers of an intermediate layer on the semiconductor material and a mask layer made of hard-baked photoresist on the semiconductor substrate; the first transcribing the convex shape of the mask layer on the intermediate layer; and the second scribing the convex shape of the intermediate layer on the semiconductor material.
Claims9
A method to form a lens on a semiconductor material monolithically, comprising steps of:
- forming an intermediate layer on a surface of the semiconductor material;
- forming a mask layer with a convex shape on the intermediate layer;
- transcribing the convex shape of the mask layer on the intermediate layer to form a processed intermediate layer by etching the mask layer and the intermediate layer to expose the surface of the semiconductor material, the processed intermediate layer having a convex shape;
- transcribing the convex shape of the processed intermediate layer on the surface of the semiconductor material to form the lens in the semiconductor layer.
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Dependencies are inferred from the claim text.