Method for fabricating semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorTsutomu Komatani
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.
Claims13
A method for fabricating a semiconductor device comprising:
- forming a first film that contact a surface of the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum;
- and
- forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.
Dependencies are inferred from the claim text.