Back to results
US 2013/0260495 A1Published application
Light emitting devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn KIM, Bok-ki MIN, Hyun-gi HONG, Jae-won LEE
Life of this patent
Estimating the term…
Abstract
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.
Claims11
A method of manufacturing a light emitting device, the method comprising:
- forming a reflection buffer layer structure including a metal buffer layer and a DBR layer on a silicon substrate;
- and
- forming a GaN-based light emitting layer structure.
Dependencies are inferred from the claim text.