Method for making light emitting diode

A method for making a light emitting diode, the method comprising:

• providing a substrate having an epitaxial growth surface;
• suspending a first carbon nanotube layer above the epitaxial growth surface;
• growing a first semiconductor layer, an active layer, and a second semiconductor layer on the epitaxial growth surface in that order, wherein the first carbon nanotube layer is enclosed in the first semiconductor layer;
• forming a third semiconductor layer on a surface of the second semiconductor layer, wherein the third semiconductor layer comprises a plurality of spaced protrusions;
• exposing a portion of the first semiconductor layer by etching a portion of the third semiconductor layer, the second semiconductor layer, and the active layer;
• and
• preparing a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer.