Back to results
US 2013/0260291 A1Published application
Modified mask for photolithography of a wafer with recess, method for producing such a mask and method for photolithography of a wafer with recess
AssigneeDisco Corporation
InventorsFlorian Bieck, Sven Spiller
Life of this patent
Estimating the term…
Abstract
A photolithography mask for a semiconductor wafer. The mask includes a protrusion section that protrudes from a handling section of the mask. An outer shape of the handling section enables handling by a mask aligner device. The protrusion includes a face surface provided at a level which is different from a face surface area of the handling section.
Claims15
A photolithography mask for a semiconductor wafer, the mask comprising:
- a handling section having an outer shape being provided for handling by a mask aligner;
- a protrusion section that protrudes from the handling section of the mask;
- and
- wherein a face surface of the protrusion section is provided at a level which is different from a face surface area of the handling section.
1 more element
A method for producing a photolithography mask, comprising:
- providing a round protrusion at the bottom of a handling section of the mask, so that a face surface of the protrusion is provided at a level which is different from a face surface area of the handling section;
- providing an opaque layer at the bottom of the round protrusion;
- and
- patterning the opaque layer.
1 more element
A photolithography method for a wafer using a mask comprising:
- providing a wafer with a thinned inner portion and a supporting structure of the wafer;
- covering at least part of the thinned inner portion with a photo resist layer;
- providing a mask such that a protrusion of the mask is provided above an upper surface of an inner portion of the wafer and a handling section of the mask is provided above an upper surface of the supporting structure at different levels;
- illuminating the mask with a light source from above;
- lifting off the protrusion of the mask;
- and
- processing the photo resist layer.
4 more elements
Dependencies are inferred from the claim text.