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US 2013/0259079 A1Published application
GaN-Based Quantum Dot Visible Laser
AssigneeThe Regents of the University of Michigan
InventorsPallab Bhattacharya, Meng Zhang
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Abstract
A III-nitride based quantum dot (QD) laser is formed of InGaN/GaN quantum dots and capable emitting at a single wavelength within the visible region, including the violet wavelength region (400-440 nm), the blue wavelength region (440-490 nm), the green wavelength region (490-570 nm), the yellow wavelength region (570-590 nm), the orange wavelength region (590-620 nm), and the red wavelength region (620-700 nm), with varying composition as described.
Claims32
A laser comprising:
- a contact layer structure for injecting conduction carriers into an active region of the laser;
- a semiconductor optical waveguide structure;
- a laser cavity;
- and
- a GaN-based quantum dot layer structure within the laser cavity and configured as the active region of the laser, the quantum dot layer structure comprising at least one layer of quantum dots each positioned and sized in a self-organizing manner to produce an emission of 400 nm-700 nm the laser cavity structure and the quantum dot layer structure being configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, a laser output having a linewidth of less than about 1 nm.
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A method of forming a laser structure, the method comprising:
- forming a semiconductor optical waveguide structure on a GaN substrate or on a GaN template on a foreign substrate;
- forming a GaN-based quantum dot layer structure as an active region of the laser structure when confined within a laser cavity, forming the quantum dot layer structure from at least one layer of quantum dots, each quantum dot positioned and sized in a self-organizing manner to produce an emission of 400 nm-700 nm the laser cavity structure, wherein the quantum dot layer structure is formed to have an InGaN/GaN structure and is configured to produce, in response to injection of the conduction carriers into the active region via the contact layer structure, a laser output having a linewidth of less than about 1 nm;
- providing a contact layer structure for injecting conduction carriers into the active region of the laser structure;
- and
- providing the laser cavity confining the active structure, to produce the laser output.
2 more elements
Dependencies are inferred from the claim text.