Semiconductor device and method of driving thereof
AssigneeKabushiki Kaisha Toshiba
InventorsAkira KATAYAMA, Katsuhiko Hoya
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AssigneeKabushiki Kaisha Toshiba
InventorsAkira KATAYAMA, Katsuhiko Hoya
Estimating the term…
A semiconductor device includes a first latch unit that latches write data based on a strobe signal, a second latch unit that receives the write data latched in the first latch unit based on a first clock signal, and a strobe generation unit that generates the strobe signal and supplies it to the first latch unit. The strobe generation unit includes a bit shift counter, which receives a second clock signal and outputs a bit shift signal having a logic level that is inverted every plural clock cycles of the second clock signal, and a logic gate that outputs the second clock signal as the strobe signal according to the bit shift signal. The latch period of the write data in the first latch part is determined by the period of the strobe signal and also the period of the bit shift signal.
A semiconductor device, comprising:
A semiconductor device, comprising:
A method for driving a semiconductor device including a first latch unit that latches write data based on a strobe signal, a second latch unit that receives the write data latched in the first latch part based on a first clock signal, and a strobe generation unit that generates the strobe signal and supplies the strobe signal to the first latch unit, the method comprising the steps of:
Dependencies are inferred from the claim text.