Read voltage generation circuit, memory and memory system including the same

A memory comprising:

• a plurality of memory blocks;
• a row circuit configured to apply a read voltage to a selected page in a selected memory of the plurality of memory blocks;
• a data access circuit configured to read data from the selected page;
• a register configured to store an initial read voltage code;
• a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code;
• and
• a voltage generation circuit configured to generate the read voltage corresponding to the read voltage code produced by the counter circuit.

A memory system comprising:

• a memory configured to include a plurality of memory blocks and a read voltage generation circuit configured to generate a read voltage that is the reference of reading of a selected memory in the memory blocks;
• and
• a memory controller configured to give an instruction of a read-retry operation on the selected memory block to the memory, when reading on the selected memory block has failed,
• wherein the read voltage generation circuit includes:
• a register configured to store an initial read voltage code;
• a counter circuit configured to change a read voltage code in every read-retry operation, wherein an initial value of the read voltage code is the initial read voltage code;
• and
• a voltage generation circuit configured to generate a read voltage corresponding to the read voltage code produced by the counter circuit.