Multi-state spin-torque transfer magnetic random access memory

A multi-state spin-torque transfer magnetic random access memory (STTMRAM) formed on a film and configured to store information upon switching current flowing therethrough causing at least one layer thereof to switch its magnetic orientation comprising:

• a first magnetic tunneling junction (MTJ) having a first fixed layer, a first sub-magnetic tunnel junction (sub-MTJ) layer formed on top of the first fixed layer, and a first free layer formed on top of the first sub-MTJ layer, the first fixed layer and first free layer each having a first magnetic anisotropy, the first free layer being capable of switching its magnetic anisotropy when switching current flows through the STTMRAM;
• at least one magnetic anisotropy layer formed on top of the first MTJ layer;
• a second MTJ formed on top of the magnetic anisotropy layer and having a second fixed layer, a second sub-MTJ layer and a second free layer, the second sub-MTJ layer formed on top of the second fixed layer, the second free layer formed on top of the second sub-MTJ layer, the second fixed and second free layers each having a second magnetic anisotropy, the second free layer being capable of switching its magnetic anisotropy when switching current flows through the STTMRAM, the first sub-MTJ layer including a first spin polarization enhanced layer (SPEL);
• a first underlayer formed between the magnetic anisotropy layer and the first fixed layer, the first MTJ being formed on top of the first underlayer;
• and
• a second underlayer formed below the second fixed layer,
• wherein the first underlayer is operable to provide the proper crystal structure template to grow the first fixed layer and the second underlayer is operable to provide the proper crystal structure template to grow the second fixed layer,
• further wherein at least one of the first or second magnetic anisotropy is perpendicular to the plane of the film.