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US 2013/0258754 A1Published application
Variable resistance memory programming
AssigneeMicron Technology, Inc.
InventorXiaonan Chen
Life of this patent
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Abstract
Some embodiments include a device having memory elements and methods of storing information into the memory elements. Such methods can include increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element. After the time interval, the methods can include decreasing the temperature of the portion of the memory element. Decreasing the temperature can be performed using a signal having a first negative slope and a second negative slope. Other embodiments are described.
Claims16
A method comprising:
- increasing a temperature of a portion of a memory element for a time interval during an operation to change a resistance state of the memory element;
- decreasing the temperature of the portion of the memory element after the time interval, wherein decreasing the temperature is performed using a signal having a first negative slope and a second negative slope.
A method comprising:
- increasing a temperature of a portion of a memory element during an operation to change a resistance state of the memory element;
- decreasing the temperature, at a first rate, to a temperature below a melting point temperature of a material of the portion of the memory element after the temperature reaches a melting point temperature of the material;
- and
- decreasing the temperature a second rate lower than the first rate to accelerate structure relaxation of the memory element.
1 more element
A method comprising:
- changing a first amplitude value of a signal to a second amplitude value in a first time interval during an operation to store information into a memory cell;
- changing the second amplitude value to a third amplitude value in a second time interval during the operation;
- and
- changing the third amplitude value to a fourth amplitude value in a third time interval during the operation, wherein the signal has a first slope during the second time interval and a second slope during the third time interval, and the second slope is different from the first slope.
1 more element
Dependencies are inferred from the claim text.