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US 2013/0258753 A1Published application
Memory devices and methods having adaptable read threshold levels
AssigneeAdesto Technologies Corporation
InventorsVenkatesh P. Gopinath, Foroozan Sarah Koushan, Derric Jawaher Herman Lewis
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Abstract
A method can include determining at least one use characteristic for the memory cells comprising a solid electrolyte, the use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance level; and adjusting a read threshold level for the memory cells based on at least the use characteristic, the read threshold level determining data values stored in the memory cells in a read operation.
Claims20
A method, comprising:
- determining at least one use characteristic for the memory cells comprising a solid electrolyte, the use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance level;
- and
- adjusting a read threshold level for the memory cells based on at least the use characteristic, the read threshold level determining data values stored in the memory cells in a read operation.
A memory device, comprising:
- a plurality of solid electrolyte memory cells programmable between at least two impedance levels;
- a controller circuit configured to generate at least one use characteristic corresponding to a number of times the memory cells have been programmed;
- and
- a read circuit configured to generate read data by comparing sense values generated from the memory cells to at least one threshold value, the at least one threshold value varying in response to at least one use characteristic.
1 more element
A memory device, comprising:
- a plurality of solid electrolyte memory cells programmable between at least two impedance levels;
- a programming circuit that applies programming electrical conditions to the memory elements to store data values therein;
- a controller circuit configured to generate at least one use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance state;
- and
- a re-conditioning circuit that, when activated, applies re-conditioning electrical conditions to the memory cells that are different from programming electrical conditions;
- wherein
- the controller circuit is further configured to activate the re-conditioning circuit in response to the use characteristic being outside of at least one limit.
4 more elements
Dependencies are inferred from the claim text.