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US 2013/0258752 A1Published application
Stack memory apparatus
AssigneeSK hynix Inc.
InventorNam Kyun PARK
Life of this patent
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Abstract
A stack memory apparatus is provided. The stack memory apparatus includes a semiconductor substrate, and a plurality of memory cells, each including a switching element and a variable resister connected in parallel, stacked on the semiconductor substrate. The plurality of memory cells is configured to be connected to each other in series.
Claims20
A memory apparatus, comprising:
- a semiconductor substrate;
- and
- a plurality of memory cells, each including a switching element and a variable resister connected in parallel, stacked on the semiconductor substrate,
- wherein the plurality of memory cells are configured to be connected to each other in series.
1 more element
A memory apparatus, comprising:
- a semiconductor substrate;
- a common source line formed on the semiconductor substrate;
- a channel layer formed on the common source line to extend in a direction perpendicular to a surface of the semiconductor substrate;
- a plurality of gates, each extending in a direction parallel to the surface of the semiconductor substrate from one sidewall of the channel layer, arranged at intervals in the direction perpendicular to the surface of the semiconductor substrate;
- a plurality of interconnections, each extending in the direction parallel to the surface of the semiconductor substrate from the other sidewall of the channel layer, arranged between adjacent gates;
- and
- a plurality of resistive layers, each arranged between adjacent interconnections.
4 more elements
A memory apparatus, comprising:
- a plurality of switching transistors located on a semiconductor substrate in a direction perpendicular to a surface of the semiconductor substrate;
- and
- a plurality of variable resistors connected parallel to the plurality of switching transistors by a one-to-one correspondence,
- wherein the plurality of switching transistors and the plurality of variable resistors are connected in series, respectively.
1 more element
Dependencies are inferred from the claim text.