Semiconductor device having multiport memory
AssigneeRenesas Electronics Corporation
InventorsKiyotada FUNANE, Ken SHIBATA, Yasuhisa SHIMAZAKI
Life of this patent
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Abstract
A semiconductor device enabling expansion of a noise margin. For example, in a memory area in which each memory cell MC is coupled to a word line WLA for a first port and a word line WLB for a second port, and a plurality of memory cells MC are disposed in a matrix shape, each word line is disposed in the order of WLA0, WLB0, WLB1, WLA1, WLA2. Further, a pitch d2 between WLA-WLA and between WLB-WLB is made smaller than a pitch d1 between WLA-WLB. As such, the word lines of an identical port are disposed at the pitch d2 on one of both sides of a certain word line and the word lines of different ports are disposed at the pitch d1 on the other.
Claims1
A semiconductor device comprising:
- a plurality of word line groups respectively including a first word line for a first port and a second word line for a second port and the first word line and the second word line being disposed in juxtaposition with one another;
- a plurality of bit line groups respectively extending in a direction orthogonal to an extension direction of the word line groups and including a first bit line for the first port and a second bit line for the second port and the first word line and the second word line being disposed in juxtaposition with one another;
- and
- a plurality of memory cells disposed at respective intersections between the word line groups and the bit line groups,
- wherein the first word line and the second word line included in one of the word line groups are disposed at a first pitch;
- wherein the first word line included in one of the word line groups is disposed adjacent to the first word line included in a word line group disposed on one neighboring side of the one word line group concerned at a second pitch;
- wherein the second word line included in one of the word line groups is disposed adjacent to the second word line included in a word line group disposed on the other neighboring side of the one word line group concerned at the second pitch;
- and
- wherein a first shield line extending in juxtaposition with the first word line and the second word line is further disposed between the first word line and the second word line .
Dependencies are inferred from the claim text.