Current correction circuit for power semiconductor device and current correction method

A current correction circuit for a power semiconductor device, the current correction circuit comprising:

• a power semiconductor device with a sensing function, including a main region through which flows a main current which is a main portion of an input current, a sense region through which flows a sense current which is a sense portion of an input current, a main terminal connected to the main region and a sense terminal connected to the sense region;
• a temperature detecting unit including a temperature detecting device that detects an ambient temperature of the power semiconductor device and a terminal that outputs the detected ambient temperature;
• and
• a current correcting unit connected to the sense terminal and the temperature detecting unit, and including:
• a current detecting unit including a current-voltage conversion circuit that converts the sense current from the sense terminal into a voltage;
• a correction unit including an arithmetic circuit that performs a predetermined operation on the basis of the detected ambient temperature and a set value corresponding to the detected ambient temperature, and outputs a control signal for correcting a variation in a current sense ratio due to a variation in the detected ambient temperature of the power semiconductor device;
• and
• a variable voltage source that outputs a variable voltage that varies based on said basis of the control signal,
• wherein each of an output terminal of the current detecting unit and an output terminal of the correction unit is connected to a respectively corresponding control input terminal of the variable voltage source,
• wherein an output terminal of the temperature detecting unit is connected to a temperature information input terminal of the correction unit,
• wherein the sense terminal of the power semiconductor device is connected to a current input terminal of the current detecting unit, and
• wherein the output voltage of the variable voltage source is adjusted according to the detected ambient temperature and a current flowing to the sense terminal, to adjust the potential of the sense terminal, thereby correcting a characteristic difference between the main region and the sense region of the power semiconductor device.