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US 2013/0256907 A1Published application
Bonded processed semiconductor structures and carriers
AssigneeSoitec
InventorsMariam Sadaka, Ionut Radu
Life of this patent
Estimating the term…
Abstract
Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.
Claims20
A bonded semiconductor structure, comprising:
- a plurality of bonded processed semiconductor structures;
- and
- a carrier die or wafer bonded to at least one bonded processed semiconductor structure of the plurality of bonded processed semiconductor structures, the carrier die or wafer having a weakened zone comprising a plurality of implanted ions therein at an average depth of between 10 nm and 1000 nm from a surface of the carrier die or wafer bonded to the at least one bonded processed semiconductor structure of the plurality of bonded processed semiconductor structures.
Dependencies are inferred from the claim text.