Wiring substrate and method of manufacturing the same, and semiconductor device and method of manufacturing the same
AssigneeOlympus Corporation
InventorsChihiro Migita, Hiroshi Kikuchi, Yoshiaki Takemoto, Yoshitaka Tadaki
Life of this patent
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Abstract
A wiring substrate may include: a base having a predetermined thickness; a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base; a wiring provided in the base and electrically connected to the electrode portions; and a resin layer formed on the base to fill between the plurality of electrode portions. An upper surface of the resin layer may be formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.
Claims13
A wiring substrate comprising:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- and
- a resin layer formed on the base to fill between the plurality of electrode portions, and wherein
- an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface.
A semiconductor device comprising:
- a wiring substrate including:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- and
- a resin layer formed on the base to fill between the plurality of electrode portions, wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface;
- and
- a semiconductor element provided in the base.
A semiconductor device comprising:
- a wiring substrate including:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- and
- a resin layer formed on the base to fill between the plurality of electrode portions, wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface;
- and
- a semiconductor chip or a semiconductor package provided in the base.
A method of manufacturing a wiring substrate including a base having a predetermined thickness, a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base, and a wiring provided in the base and electrically connected to the electrode portions, the method comprising:
- forming the plurality of electrode portions in one surface of the base;
- forming a resin layer on the base to fill between the plurality of electrode portions;
- performing a planarization process on upper surfaces of the electrode portions and the resin layer to expose the upper surfaces of the electrode portions;
- and
- performing upper-surface processing on the upper surfaces of the electrode portions and the resin layer after the planarization process, so that the resin layer is more removed than the electrode portions.
A method of manufacturing a semiconductor device formed by bonding at least two wiring substrates having electrode portions formed therein, wherein at least one of the wiring substrates is a wiring substrate including:
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- and
- a resin layer formed on the base to fill between the plurality of electrode portions, and wherein
- an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface, and
- the substrates are heated to a predetermined temperature and bonded.
A method of manufacturing a semiconductor device formed by bonding at least two wiring substrates having electrode portions formed therein, wherein at least one of the wiring substrates is a wiring substrate in a semiconductor device including:
- a wiring substrate including
- a base having a predetermined thickness;
- a plurality of electrode portions formed to protrude on one surface in a thickness direction of the base;
- a wiring provided in the base and electrically connected to the electrode portions;
- and
- a resin layer formed on the base to fill between the plurality of electrode portions, wherein an upper surface of the resin layer is formed in a concave shape lower than a maximum height of the electrode portion, and an upper surface of the electrode portion and the upper surface of the resin layer form a continuous curved surface;
- and
- a semiconductor element provided in the base, and wherein
- the substrates are heated to a predetermined temperature and bonded.
Dependencies are inferred from the claim text.