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US 2013/0256818 A1Published application
Methods of forming spin torque devices and structures formed thereby
AssigneeIntel Corporation
InventorsDmitri E. Nikonov, George I. Bourianoff, Ajey P. Jacob
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Abstract
Methods of forming spin torque microelectronic devices are described. Those methods may include forming a free FM layer on a substrate, forming a non-magnetic layer on the free FM layer, forming at least three input pillars on the non-magnetic layer, and forming an output pillar on the non-magnetic layer to form a majority gate device.
Claims29
A method comprising;
- forming a free FM layer on a substrate;
- forming a non-magnetic layer on the free FM layer;
- forming at least three input pillars on the non-magnetic layer;
- and
- forming an output pillar on the non-magnetic layer to form a majority gate device.
2 more elements
A structure comprising:
- a nanowire disposed on a substrate, wherein the nanowire comprises alternating regions of a magnetic portion and a non-magnetic portion adjacent to each other;
- and
- electrodes attached to non-magnetic ends of the nanowire.
(canceled)
A method comprising:
- connecting a top and a bottom electrode of a first spin torque oscillator to a top and bottom electrode of a second spin torque oscillator with a top metal line and a bottom metal line;
- and
- passing an electric current through the first spin torque oscillator, wherein the first spin torque oscillator comprises a voltage drop change.
A structure comprising:
- a top and a bottom electrode of a first spin torque oscillator;
- a top and bottom electrode of a second spin torque oscillator, wherein the top and bottom electrode of the first spin torque oscillator is connected to the top and bottom electrode of the second spin torque oscillator by a top metal line across the top electrodes and a bottom metal line across the bottom electrodes.
Dependencies are inferred from the claim text.