US 2013/0256808 A1 · Semiconductor Device and Method of Manufacturing the Same

Abstract

The present invention discloses a semiconductor device, comprising a first MOSFET; a second MOSFET; a first stress liner covering the first MOSFET and having a first stress; a second stress liner covering the second MOSFET and having a second stress; wherein the second stress liner and/or the first stress liner comprise(s) a metal oxide. In accordance with the high-stress CMOS and method of manufacturing the same of the present invention, a stress layer comprising a metal oxide is formed selectively on PMOS and NMOS respectively by using a CMOS compatible process, whereby carrier mobility of the channel region is effectively enhanced and the performance of the device is improved.

Claims19

Dependent claims

A semiconductor device, comprising:

a first MOSFET;
a second MOSFET;
a first stress liner covering the first MOSFET and having a first stress;
and
a second stress liner covering the second MOSFET and having a second stress,
wherein the second stress liner and/or the first stress liner comprise(s) a metal oxide.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/520,791Filed 11 Apr 2012

Priority

CN 20120083156.127 Mar 2012

Published

3 Oct 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 30/601
Insulated-gate field-effect transistors [IGFET]: having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
H10D 30/792
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: comprising applied insulating layers, e.g. stress liners
H10D 84/0167
The components including complementary IGFETs, e.g. CMOS devices: manufacturing their channels

Semiconductor Device and Method of Manufacturing the Same

Life of this patent

Semiconductor Device and Method of Manufacturing the Same

Life of this patent

Abstract

Claims19