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US 2013/0256801 A1Published application
Integrated circuit structure to resolve deep-well plasma charging problem and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDavid YEN, Sung-Chieh LIN, Kuoyuan (Peter) HSU
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Abstract
During various processing operations, ions from process plasma may be transfer to a deep n-well (DNW) formed under devices structures. A reverse-biased diode may be connected to the signal line to protect a gate dielectric formed outside the DNW and is connected to the drain of the transistor formed inside the DNW.
Claims20
An integrated circuit (IC) structure, comprising:
- a deep n-well (DNW) in a substrate;
- a p-channel metal-oxide-semiconductor (PMOS) transistor formed inside the DNW;
- an NMOS transistor formed in the substrate and outside the DNW;
- a dissipation device in the substrate;
- and
- an electrical path between a drain of the PMOS transistor and a gate structure of the NMOS transistor, wherein the dissipation device is also connected to the electrical path.
3 more elements
An integrated circuit (IC) structure, comprising:
- a deep n-well (DNW) in a substrate;
- a p-channel metal-oxide-semiconductor (PMOS) transistor formed inside the DNW;
- an NMOS transistor formed in the substrate and outside the DNW;
- a dissipation device in the substrate;
- and
- an electrical path between a gate structure of the PMOS transistor and a drain of the NMOS transistor, wherein the dissipation device is also connected to the electrical path.
3 more elements
A method for forming an integrated circuit structure, the method comprising:
- forming a deep n-well (DNW) in a substrate;
- forming a PMOS transistor in the DNW;
- forming an NMOS transistor in the substrate and outside the DNW;
- forming a reverse-biased diode;
- and
- forming an electrical path between a drain of the PMOS transistor and a gate structure of the NMOS transistor, wherein the dissipation device is also connected to the electrical path.
3 more elements
Dependencies are inferred from the claim text.