Method of manufacturing semiconductor device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKeiichi SAWA, Tetsuya Kai, Shinji Mori, Kenichiro Toratani, Masayuki Tanaka
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Abstract
A method of manufacturing a semiconductor device comprising: forming a first insulating film on a semiconductor substrate; forming an adsorption film on the first insulating film; forming a first film containing germanium on the adsorption film; forming a second insulating film on the first film; forming a floating electrode film on the second insulating film; forming a third insulating film on the floating electrode film; and forming a gate electrode on the third insulating film.
Claims14
A method of manufacturing a semiconductor device comprising:
- forming a first insulating film on a semiconductor substrate;
- forming an adsorption film on the first insulating film;
- forming a first film containing germanium on the adsorption film;
- forming a second insulating film on the first film;
- forming a floating electrode film on the second insulating film;
- forming a third insulating film on the floating electrode film;
- and
- forming a gate electrode on the third insulating film.
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film provided on the semiconductor substrate;
- a first film provided on the first insulating film having a surface germanium concentration of 1×1015 atoms/cm2 or less;
- a second insulating film provided on the first film;
- a floating electrode film provided on the second insulating film;
- a third insulating film provided on the floating electrode film;
- and
- a gate electrode provided on the third insulating film.
Dependencies are inferred from the claim text.