Fin Structure for a FinFET Device

A field effect transistor (FinFET) device, comprising:

• a substrate;
• a first semiconductor material disposed on the substrate;
• a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material;
• a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material;
• and
• a gate layer formed over the first fin, a top surface of the first semiconductor material disposed between the first and second fins, and the second fin.

A method of forming a fin field effect transistor (FinFET) device, comprising:

• forming a first semiconductor material on a substrate;
• forming a shallow trench isolation (STI) region over the substrate and a lower portion of the first semiconductor material;
• epitaxially growing a second semiconductor material along sidewalls of an upper portion of the first semiconductor material;
• and
• selectively etching away the upper portion of the first semiconductor material to form a first fin and a second fin, the first fin spaced apart from the second fin by a width of the first semiconductor material.