Integrated circuit structure having air-gap trench isolation and related design structure
AssigneeInternational Business Machines Corporation
InventorsRenata A. Camillo-Castillo, James S. Dunn, David L. Harame, Anthony K. Stamper
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Abstract
A method of forming an integrated circuit structure includes: forming a vent via extending through a shallow trench isolation (STI) and into a substrate; selectively removing an exposed portion of the substrate at a bottom of the vent via to form an opening within the substrate, wherein the opening within the substrate abuts at least one of a bottom surface or a sidewall of the STI; and sealing the vent via to form an air gap in the opening within the substrate.
Claims20
A method of forming an integrated circuit structure, the method comprising:
- forming a vent via extending through a shallow trench isolation (STI) and into a substrate;
- selectively removing an exposed portion of the substrate at a bottom of the vent via to form an opening within the substrate, wherein the opening within the substrate abuts at least one of a bottom surface or a sidewall of the STI;
- and
- sealing the vent via to form an air gap in the opening within the substrate.
A transistor structure comprising:
- a substrate;
- a shallow trench isolation (STI) located within the substrate;
- a base region overlying the STI;
- a collector region separated from the base region by the substrate;
- an air gap region within the substrate, the air gap region abutting at least one of a lower surface of the STI or a sidewall of the STI;
- and
- a cap layer sealing the air gap region.
A design structure tangibly embodied in a machine readable medium for design, manufacturing, or testing a semiconductor device, the design structure comprising:
- a transistor structure including:
- a substrate;
- a shallow trench isolation (STI) located within the substrate;
- a base region overlying the STI;
- a collector region separated from the base region by the substrate;
- an air gap region within the substrate, the air gap region abutting at least one of a lower surface of the STI or a sidewall of the STI;
- and
- a cap layer sealing the air gap region.
Dependencies are inferred from the claim text.