Integrated circuit having a staggered heterojunction bipolar transistor array
AssigneeFreescale Semiconductor, Inc.
InventorYun Wei
Life of this patent
Estimating the term…
Abstract
An integrated circuit is provided. The integrated circuit may include, but is not limited to, a plurality of heterojunction bipolar transistors, wherein each heterojunction bipolar transistor is staggered with respect to any adjacent heterojunction bipolar transistor. The plurality of heterojunction bipolar transistors may be arranged in a column, wherein each heterojunction bipolar transistor is staggered in the column with respect to any adjacent heterojunction bipolar transistor in the column in a first direction and a second direction, wherein the second direction is substantially orthogonal to the first direction.
Claims20
An integrated circuit, comprising:
- a plurality of heterojunction bipolar transistors, wherein each heterojunction bipolar transistor is staggered with respect to any adjacent heterojunction bipolar transistor of the plurality of heterojunction bipolar transistors.
A heterojunction bipolar transistor, comprising:
- a single collector contact disposed on a first layer;
- a base contact disposed on a second layer, the second layer being disposed on the first layer;
- and
- an emitter contact disposed on a third layer, the third substrate being disposed on the second layer.
Dependencies are inferred from the claim text.