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US 2013/0256754 A1Published application
Compound semiconductor device and method for manufacturing the same
AssigneeFujitsu Limited
InventorYouichi KAMADA
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Abstract
A compound semiconductor device includes: a substrate; an electron transit layer and electron supply layer formed over the substrate; a gate electrode, source electrode, and drain electrode formed over the electron supply layer; and a first Fe-doped layer provided between the substrate and the electron transit layer in a region corresponding to the position of the gate electrode in plan view, the first Fe-doped layer being doped with Fe to reduce two dimensional electron gas generated below the gate electrode.
Claims20
A compound semiconductor device comprising:
- a substrate;
- an electron transit layer and electron supply layer formed over the substrate;
- a gate electrode, source electrode, and drain electrode formed over the electron supply layer;
- and
- a first Fe-doped layer provided between the substrate and the electron transit layer in a region corresponding to the position of the gate electrode in plan view, the first Fe-doped layer being doped with Fe to reduce two dimensional electron gas generated below the gate electrode.
2 more elements
A method for manufacturing a compound semiconductor device comprising:
- forming an electron transit layer and an electron supply layer over a substrate;
- and
- forming a gate electrode, a source electrode, and a drain electrode over the electron supply layer, wherein
- a first Fe-doped layer is formed before the formation of the electron transit layer so as to overlie the substrate in a region corresponding to the position of the gate electrode in plan view, the first Fe-doped layer being doped with Fe to reduce two dimensional electron gas generated below the gate electrode.
1 more element
Dependencies are inferred from the claim text.