Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorYasuyo Kurachi
Life of this patent
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Abstract
A semiconductor device includes: an operation layer that is provided on a substrate and is made of a GaAs-based semiconductor; a first AlGaAs layer provided on the operation layer; a gate electrode provided on the first AlGaAs layer; an second AlGaAs layer having n-type conductivity and provided on the first AlGaAs layer of both sides of the gate electrode, an Al composition ratio of the second AlGaAs layer being larger than that of the first AlGaAs layer and being equal to or more than 0.3 and equal to or less than 0.5; an n-type GaAs layer selectively provided on the second AlGaAs layer; and a source electrode and a drain electrode that contain Au and are provided on the n-type GaAs layer.
Claims15
A semiconductor device comprising:
- an operation layer that is provided on a substrate and is made of a GaAs-based semiconductor;
- a first AlGaAs layer provided on the operation layer;
- a gate electrode provided on the first AlGaAs layer;
- an second AlGaAs layer having n-type conductivity and provided on the first AlGaAs layer of both sides of the gate electrode, an Al composition ratio of the second AlGaAs layer being larger than that of the first AlGaAs layer and being equal to or more than 0.3 and equal to or less than 0.5;
- an n-type GaAs layer selectively provided on the second AlGaAs layer;
- and
- a source electrode and a drain, electrode that contain Au and are provided on the n-type GaAs layer.
A semiconductor device comprising:
- a first AlGaAs layer;
- a GaAs layer provided on the first AlGaAs layer;
- an Au contained electrode provided on the GaAs layer;
- a second AlGaAs layer provided between the first AlGaAs layer and the GaAs layer and having an Al composition lager than that of the first AlGaAs layer, a thickness of the second AlGaAs layer is smaller than the first AlGaAs layer and the GaAs layer.
Dependencies are inferred from the claim text.