Semiconductor light emitting device and fabrication method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorYu Seung Kim
Life of this patent
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Abstract
A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.
Claims20
A semiconductor light emitting device comprising:
- a substrate having first and second electrode patterns on at least one surface thereof;
- a light emitting structure on a surface of the substrate and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
- a first electrode structure electrically connected to the first conductivity-type semiconductor layer;
- a second electrode structure electrically connected to the second conductivity-type semiconductor layer, at least a portion of the second electrode structure positioned between the substrate and the light emitting structure, and extending to an outer side surface of the light emitting structure;
- an insulating layer between the substrate and the second electrode structure to separate the substrate and the second electrode structure;
- a first connection portion electrically connecting the first electrode structure and the first electrode pattern;
- and
- a second connection portion electrically connecting the second electrode structure and the second electrode pattern.
A method for fabricating a semiconductor light emitting device, the method comprising:
- preparing a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially applied to a substrate for growth of semiconductor;
- forming first and second electrode structures electrically connected to the first and second conductivity-type semiconductor layers, respectively;
- preparing a substrate having first and second electrode patterns formed on at least one surface thereof;
- attaching the light emitting structure and the substrate by using an insulator interposed between a surface of the light emitting structure on which the second electrode structure is formed and a surface of the substrate on which the first and second electrode patterns are formed;
- removing the substrate for growth of semiconductor from the light emitting structure;
- removing portions of the light emitting structure and the insulator to expose at least portions of the first and second electrode patterns;
- and
- forming first and second connection portions electrically connecting the first and second electrode structures to the first and second electrode patterns, respectively.
A light emitting device comprising:
- a substrate having an upper surface, the substrate extending in a horizontal direction of extension;
- a light emitting structure having a lower layer, an intermediate layer, and an upper layer, the light emitting structure positioned on the substrate in a vertical direction relative to the horizontal direction;
- a first electrode structure electrically connected to the lower layer of the light emitting structure;
- a second electrode structure electrically connected to the upper layer of the light emitting structure;
- and
- an insulating layer positioned between the first electrode structure and the second electrode structure in the horizontal direction and positioned between the light emitting structure and the upper surface of the substrate in the vertical direction.
Dependencies are inferred from the claim text.