Light emitting device and manufacturing method thereof
AssigneesKun Hsin Technology Inc., Winsky Technology Limited
InventorKun Chuan LIN
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Abstract
The subject invention relates to a light emitting device, including a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type, wherein the second conductive type is different from the first conductive type; and a passivation layer covering the first and the second semiconductor layers, wherein the passivation layer has a rough surface made from a roughing treatment. The subject invention further discloses a manufacturing method for such light emitting device. The structure of the light emitting device of the subject invention can eliminate unnecessary elements, reduce process time, facilitate control of light emitting shape and further improve light emitting efficiency.
Claims14
A light emitting device, comprising:
- a first semiconductor layer having a first conductive type;
- a second semiconductor layer having a second conductive type, wherein the second conductive type is different from the first conductive type;
- and
- a passivation layer covering the first and the second semiconductor layers, wherein the passivation layer has a rough surface made from a roughing treatment.
A manufacturing method for a light emitting device, comprising:
- forming a first semiconductor layer having a first conductive type;
- forming a second semiconductor layer having a second conductive type, wherein the second conductive type is different from the first conductive type;
- forming a passivation layer covering the first and the second semiconductor layers;
- and
- roughing the passivation layer.
Dependencies are inferred from the claim text.