US 2013/0256703 A1Published application

Amoled with n-type tft

AssigneeAu Optronics Corporation

InventorHsing-Hung Hsieh

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Abstract

A stratified organic light-emitting diode structure includes a thin-film transistor and an organic light-emitting diode (OLED). The OLED is fabricated on a planarization layer that has a top surface substantially parallel to the substrate, and the layers in the organic light-emitting diode (OLED) are substantially parallel to each other. The major part of each OLED layer has a uniform thickness so that the OLED produces a uniform brightness. The planarization layer covers the thin-film transistor entirely and the planarization layer on top of the thin-film transistor is also covered by an insulation layer. In order to electrically connect the top electrode of the OLED to the drain terminal of the thin-film transistor, an opening is made through both the top insulating layer and the planarization layer to expose part of the drain terminal. Spacers with uniform height are fabricated on the top insulating layer to protect the pixel structure.

Claims20

Dependent claims

A method for fabricating an organic light-emitting diode structure on a substrate, comprising:

providing a switching structure on the substrate, wherein the switching structure comprises a thin-film transistor comprising a source terminal, a gate terminal and a drain terminal;
disposing a first insulating layer on the switching structure;
disposing a first electrode layer on one part of the first insulating layer;
disposing a second insulating layer on the first electrode layer and a different part of the first insulating layer;
forming a first opening through the second insulating layer for providing an exposed part of the first electrode layer and a second opening through the first insulating layer and the second insulating layer for providing an exposed part of the drain terminal;
disposing an organic active layer over the exposed part of the first electrode layer through the first opening;
and
disposing a second electrode layer over the second insulating layer and the organic active layer such that one part of the second electrode layer is in electrical contact with the organic active layer to form a light-emitting diode together with the first electrode layer, and that a different part of the second electrode layer is in electrical contact with the exposed part of the drain terminal through the second opening.

5 more elements

An organic light-emitting diode structure, comprising:

a switching structure on a substrate, the switching structure comprising a thin-film transistor comprising a source terminal, a gate terminal and a drain terminal;
a first insulating layer disposed on the switching structure;
a first electrode layer disposed on one part of the first insulating layer;
a second insulating layer disposed on the first electrode layer and a different part of the first insulating layer, wherein a first opening made through the second insulating layer for providing an exposed part of the first electrode layer, and that a second opening made through the first insulating layer and the second insulating layer for providing an exposed part of the drain terminal;
an organic active layer disposed over the exposed part of the first electrode layer through the first opening;
and
a second electrode layer disposed over the second insulating layer and the organic active layer such that one part of the second electrode layer is in electrical contact with the organic active layer, and that a different part of the second electrode layer is in electrical contact with the exposed part of the drain terminal through the second opening.

4 more elements

A display panel comprising:

a substrate;
and
a plurality of organic light-emitting diode structures disposed on the substrate, wherein each of the organic light-emitting diode structure comprises:
a switching structure on a substrate, the switching structure comprising a thin-film transistor comprising a source terminal, a gate terminal and a drain, terminal;
a first insulating layer disposed on the switching structure;
a first electrode layer disposed on one part of the first insulating layer;
a second insulating layer disposed on the first electrode layer and a different part of the first insulating layer, wherein a first opening made through the second insulating layer for providing an exposed part of the first electrode layer, and that a second opening made through the first insulating layer and the second insulating layer for providing an exposed part of the drain terminal;
an organic active layer disposed over the exposed part of the first electrode layer through the first opening;
a second electrode layer disposed over the second insulating layer and the organic active layer such that one part of the second electrode layer is in electrical contact with the organic active layer, and that a different part of the second electrode layer is in electrical contact with the exposed part of the drain terminal through the second opening;
and
one or more spacers disposed over and in contact with the second insulating layer, wherein the organic active layer comprises:
an electron transport layer adjacent to the second electrode layer,
a hole transport layer adjacent to the first electrode layer,
an emissive layer between the electron transport layer and the hole transport layer, and
a hole injection layer between the hole transport layer and the first electrode layer.

12 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/438,071Filed 3 Apr 2012
Published: 3 Oct 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10K 59/123
Active-matrix OLED [AMOLED] displays: connection of the pixel electrodes to the thin film transistors [TFT]
H10K 59/124
Active-matrix OLED [AMOLED] displays: insulating layers formed between TFT elements and OLED elements
H10K 59/1201
Active-matrix OLED [AMOLED] displays: manufacture or treatment
H10K 59/122
Active-matrix OLED [AMOLED] displays: pixel-defining structures or layers, e.g. banks