Strained silicon channel semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsChan-Lon Yang, Ted Ming-Lang Guo, Chin-I Liao, Chin-Cheng Chien, Shu-Yen Chan, Chun-Yuan Wu
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Abstract
A strained silicon channel semiconductor structure comprises a substrate having an upper surface, a gate structure formed on the upper surface, at least one recess formed in the substrate at lateral sides of the gate structure, wherein the recess has at least one sidewall which has an upper sidewall and a lower sidewall concaved in the direction to the gate structure, and the included angle between the upper sidewall and horizontal plane ranges between 54.5°-90°, and an epitaxial layer filled into the two recesses.
Claims8
A strained silicon channel semiconductor structure, comprising:
- a substrate having an upper surface;
- a gate structure formed on said upper surface;
- at least one recess formed in said substrate at lateral sides of said gate structure, wherein said at least one recess has at least one sidewall, said at least one sidewall has an upper sidewall and a lower sidewall concaved in the direction to said gate structure, and an included angle between said upper sidewall and a horizontal plane ranges between 54.5°-90°;
- and
- an epitaxial layer filled into said at least one recess.
Dependencies are inferred from the claim text.