Compound semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsMasato NISHIMORI, Toshihide Kikkawa, Tadahiro Imada
Life of this patent
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Abstract
An embodiment of a compound semiconductor device includes: a substrate; an electron transport layer formed over the substrate; an electron supply layer formed over the electron transport layer; a source electrode and a drain electrode formed over the electron supply layer; a gate electrode formed over the electron supply layer between the source electrode and the drain electrode; a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode; and a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer.
Claims18
A compound semiconductor device comprising;
- a substrate;
- an electron transport layer formed over the substrate;
- an electron supply layer formed over the electron transport layer;
- a source electrode and a drain electrode formed over the electron supply layer;
- a gate electrode formed over the electron supply layer between the source electrode and the drain electrode;
- a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode;
- and
- a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer.
A power supply apparatus, comprising
- a compound semiconductor device, which comprises:
- a substrate;
- an electron transport layer formed over the substrate;
- an electron supply layer formed over the electron transport layer;
- a source electrode and a drain electrode formed over the electron supply layer;
- a gate electrode formed over the electron supply layer between the source electrode and the drain electrode;
- a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode;
- and
- a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer.
An amplifier, comprising
- a compound semiconductor device, which comprises:
- a substrate;
- an electron transport layer formed over the substrate;
- an electron supply layer formed over the electron transport layer;
- a source electrode and a drain electrode formed over the electron supply layer;
- a gate electrode formed over the electron supply layer between the source electrode and the drain electrode;
- a p-type compound semiconductor layer formed between the electron supply layer and the gate electrode;
- and
- a compound semiconductor layer containing an n-type impurity formed between the electron supply layer and the p-type compound semiconductor layer.
A method of manufacturing a compound semiconductor device, comprising:
- forming an electron transport layer over a substrate;
- forming an electron supply layer over the electron transport layer;
- forming a compound semiconductor layer containing an n-type impurity over the electron supply layer;
- forming a p-type compound semiconductor layer over the compound semiconductor layer containing an n-type impurity;
- etching the p-type compound semiconductor layer so as to remain a part of the p-type compound semiconductor layer;
- annealing so as to activate a p-type impurity in the p-type compound semiconductor layer;
- forming a source electrode and a drain electrode over the electron supply layer so that the remaining part of the p-type compound semiconductor layer is between the source electrode and the drain electrode;
- and
- forming a gate electrode over the remaining part of the p-type compound semiconductor layer.
Dependencies are inferred from the claim text.