Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device

A graphene semiconductor device, the device comprising:

• a gate electrode on a substrate;
• a gate insulating layer on the gate electrode;
• a graphene member on the gate insulating layer;
• a semiconductor member joined with the graphene member;
• a first electrode on the semiconductor member;
• and
• a second electrode on the graphene member, wherein the second electrode is spaced apart from the semiconductor member and the first electrode.

An organic light emitting display, comprising:

• a switching unit including a graphene semiconductor device, wherein the switching unit has a first terminal, a second terminal, and a third terminal;
• a scanning line connected to the first terminal of the switching unit;
• a data line connected to the second terminal of the switching unit;
• and
• a light emitting unit connected to the third terminal of the switching unit,
• wherein the graphene semiconductor device includes,
• a gate electrode on a substrate,
• a gate insulating layer on the gate electrode,
• a graphene member on the gate insulating layer,
• a semiconductor member joined with the graphene member,
• a first electrode on the semiconductor member, and
• a second electrode on the graphene member, wherein the second electrode is spaced apart from the semiconductor member and the first electrode.

An organic light emitting display, comprising:

• a switching unit including a graphene semiconductor device, wherein the switching unit includes a first terminal, a second terminal, and a third terminal;
• a scanning line connected to the first terminal of the switching unit;
• a data line connected to the second terminal of the switching unit;
• a driving unit having a first terminal and a second terminal, wherein the first terminal of the driving unit is connected to the third terminal of the switching unit;
• and
• a light emitting unit connected to the second terminal of the driving unit,
• wherein the graphene semiconductor device includes,
• a gate electrode on a substrate,
• a gate insulating layer on the gate electrode,
• a graphene member on the gate insulating layer,
• a semiconductor member joined with the graphene member,
• a first electrode on the semiconductor member, and
• a second electrode on the graphene member, wherein the second electrode is spaced apart from the semiconductor member and the first electrode.

A memory, comprising:

• a switching unit including a graphene semiconductor device, wherein the switching unit includes a first terminal, a second terminal, and a third terminal;
• a word line connected to the first terminal of the switching unit;
• a gate line connected to the second terminal of the switching unit;
• a resistive unit having a first terminal and a second terminal, wherein the first terminal of the resistive unit is connected to the third terminal of the switching unit;
• and
• a bit line connected to the second terminal of the resistive unit,
• wherein the graphene semiconductor device includes,
• a gate electrode on a substrate,
• a gate insulating layer on the gate electrode,
• a graphene member on the gate insulating layer,
• a semiconductor member joined with the graphene member,
• a first electrode on the semiconductor member, and
• a second electrode on the graphene member, wherein the second electrode is spaced apart from the semiconductor member and the first electrode.