Substrate processing method and substrate processing apparatus
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorsTakashi OTA, Yuya AKANISHI, Akio HASHIZUME
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Abstract
A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.
Claims10
A substrate processing method comprising:
- a water removing step of removing water from a substrate;
- a silylating step of supplying a silylating agent to the substrate after the water removing step;
- and
- an etching step of supplying an etching agent to the substrate after the silylating step.
A substrate processing apparatus comprising:
- a water removing unit that removes water from a substrate;
- a silylating agent supplying unit that supplies a silylating agent to the substrate;
- an etching agent supplying unit that supplies an etching agent to the substrate;
- and
- a control unit that controls the water removing unit to execute a water removing step of removing water from the substrate, controls the silylating agent supplying unit to execute a silylating step of supplying the silylating agent to the substrate after the water removing step, and controls the etching agent supplying unit to execute an etching step of supplying the etching agent to the substrate after the silylating step.
Dependencies are inferred from the claim text.