Methods and apparatuses for effectively reducing gas residence time in a plasma processing chamber
AssigneeLam Research Corporation
InventorAndreas Fischer
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AssigneeLam Research Corporation
InventorAndreas Fischer
Estimating the term…
Methods and apparatuses for controlling plasma generation in a plasma processing chamber to reduce an effective residence time of by-product gases or to control in real time the concentration of certain polymer pre-cursors or reaction by-products in the plasma processing chamber are disclosed. The gas residence time is “effectively” reduced by reducing the plasma reaction for at least a portion of the process time. Thresholds can be provided to control when the plasma reaction is permitted to proceed at the full rate and when the plasma reaction is permitted to proceed at the reduced rate. By reducing the rate of plasma by-product generation at least for a portion of the process time, the by-product gas residence time may be effectively reduced to improve process results.
A plasma processing system having at least one plasma processing chamber for processing a substrate, comprising:
A method for processing a substrate in a plasma system having at least one plasma processing chamber, said chamber including at least a lower electrode for supporting said substrate, a chamber ceiling disposed above said lower electrode such that a plasma processing region exists between an upper surface of said substrate and said chamber ceiling during said processing, and a plasma generation power source for providing energy to generate a plasma in said plasma processing region from supplied reactant gas, said method comprising;
A plasma processing system having at least one plasma processing chamber for processing a substrate, comprising:
Dependencies are inferred from the claim text.