Process kit with plasma-limiting gap
AssigneeApplied Materials, Inc.
InventorsALAN RITCHIE, DONNY YOUNG
Life of this patent
Estimating the term…
Abstract
Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.
Claims20
A process kit, comprising:
- a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber;
- and
- a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.
A substrate processing system, comprising:
- a process chamber having an inner volume;
- a shield disposed in the inner volume and having one or more sidewalls configured to surround a first volume within the inner volume;
- a substrate support disposed in the inner volume;
- and
- a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein the first ring rests atop the substrate support and wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.
Dependencies are inferred from the claim text.