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US 2013/0255772 A1Published application
Method for the wet-chemical etching back of a solar cell emitter
AssigneeSchott Solar AG
InventorsAgata Lachowicz, Berthold Schum, Knut Vaas
Life of this patent
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Abstract
A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.
Claims19
1-11. (canceled)
A method for the wet-chemical etching back of a surface region of an emitter of a crystalline solar cell in an etching solution, the surface region having a dopant concentration of greater than 1018 atoms/cm3, comprising:
- using, as an etching solution to etch back the surface region, an HF-containing etching solution containing at least one oxidizing agent selected from the group consisting of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.
Dependencies are inferred from the claim text.