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US 2013/0255535 A1Published application
CZTSe NANOINK COMPOSITION AND SPUTTERING TARGET THEREOF
OwnerChi-Jie Wang, Shih-Chang Sheiinventors
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OwnerChi-Jie Wang, Shih-Chang Sheiinventors
Estimating the term…
The present invention provides a Cu2ZnSnSe4 (CZTSe) nanoink composition and a CZTSe sputtering target thereof for use in manufacturing an absorption layer of a thin-film solar cell. The CZTSe sputtering target includes a binary multiphase mixture and/or a ternary multiphase mixture. The CZTSe nanoink composition not only includes the binary multiphase mixture and/or ternary multiphase mixture but also includes a chelating agent. Any two of Cu, Zn, Sn, and Se are combined by the chelating agent to form the binary multiphase mixture. Alternatively, any three of Cu, Zn, Sn, and Se are combined by the chelating agent to form the ternary multiphase mixture. By manufacturing the absorption layer of the thin-film solar cell in the aforesaid manner, the absorption layer has a perfect quaternary monophase structure but does not manifest any impure phase detrimental to photoelectric conversion efficiency.
A Cu2ZnSnSe4 (CZTSe) nanoink composition for use in manufacturing an absorption layer of a thin-film solar cell, the CZTSe nanoink composition comprising:
A Cu2ZnSnSe4 (CZTSe) nanoink composition for use in manufacturing an absorption layer of a thin-film solar cell, the CZTSe nanoink composition comprising:
A Cu2ZnSnSe4 (CZTSe) sputtering target for use in manufacturing an absorption layer of a thin-film solar cell, the CZTSe sputtering target comprising a binary multiphase mixture of any two elements selected from the group consisting of copper, zinc, tin, and selenium.
A Cu2ZnSnSe4 (CZTSe) sputtering target for use in manufacturing an absorption layer of a thin-film solar cell, the CZTSe sputtering target comprising a ternary multiphase mixture of any three elements selected from the group consisting of copper, zinc, tin, and selenium.
Dependencies are inferred from the claim text.