# US 2013/0252084 A1 · Substrate and secondary battery

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0252084 A1
- Document ID: US20130252084A1
- Status: Published application
- Kind: A1
- Application number: 13/784,938
- Filed: 2013-03-05
- Published: 2013-09-26
- Earliest claimed: 2012-03-26
- Assignees: Toshiba Materials Co., Ltd.; Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
- Inventors: Akito SASAKI; Miho NAKAMURA; Tomomichi NAKA; Yoko TOKUNO; Hideyuki OOZU
- Web page: https://patentgrep.com/patent/US20130252084A1

## CPC

- H01M 4/48: of inorganic oxides or hydroxides
- H01M 4/364: {as mixtures}
- H01M 4/366: {as layered products}
- H01M 4/483: {for non-aqueous cells (H01M4/485 takes precedence)}
- H01M 14/00: Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M 16/00: Structural combinations of different types of electrochemical generators
- H01M 2300/0028: characterised by the solvent
- Y02E 60/10: Energy storage using batteries
- Y02E 60/50: Fuel cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H01M: PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

According to one embodiment, a substrate includes a semiconductor layer. The semiconductor layer comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm−1, a second peak in a range of 630 to 720 cm−1, and a third peak in a range of 800 to 810 cm−1 in Raman spectroscopic analysis. The semiconductor layer has a thickness of 1 μm or more. The semiconductor layer has a porosity of 20 to 80 vol %.

## Claims

### Claim 1

A substrate comprising a semiconductor layer which comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm−1, a second peak in a range of 630 to 720 cm−1, and a third peak in a range of 800 to 810 cm−1 in Raman spectroscopic analysis and has a thickness of 1 μm or more and a porosity of 20 to 80 vol %.

### Claim 2 (depends on 1)

The substrate according to claim 1, wherein an average BET specific surface area of the tungsten oxide particles is 0.1 m2/g or more.

### Claim 3 (depends on 1)

The substrate according to claim 1, wherein the thickness of the semiconductor layer is 5 μm or more.

### Claim 4 (depends on 1)

The substrate according to claim 1, wherein a coating is formed on at least a part of surfaces of the tungsten oxide particles.

### Claim 5 (depends on 4)

The substrate according to claim 4, wherein the coating comprises at least one kind of compound selected from the group consisting of Y2O3, TiO2, ZnO, SnO2, ZrO2, MgO, Al2O3, CeO2, Bi2O3, Mn3O4, Tm2O3, Ta2O5, Nb2O5, La2O3, and ITO.

### Claim 6 (depends on 1)

The substrate according to claim 1, wherein the semiconductor layer includes at least one kind of second particles selected from the group consisting of metal oxide particles, metal boride particles, metal fluoride particles, carbonate particles, carbon particles, metal carbide particles, and metal particles.

### Claim 7 (depends on 1)

The substrate according to claim 1, wherein an average pore size of the semiconductor layer is 5 nm or more.

### Claim 8 (depends on 1)

The substrate according to claim 1, wherein an average pore size of the semiconductor layer is from 7 to 20 nm.

### Claim 9 (depends on 1)

The substrate according to claim 1, wherein the thickness of the semiconductor layer is from 5 to 300 μm and the porosity of the semiconductor layer is from 40 to 70 vol %.

### Claim 10 (depends on 1)

A secondary battery comprising:
the substrate according to claim 1;
an opposed electrode; and
an electrolyte composition which is provided between the semiconductor layer of the substrate and the opposed electrode.

### Claim 11 (depends on 10)

The secondary battery according to claim 10, wherein an electrical storage function is 100 C/m2 or more.

### Claim 12 (depends on 10)

The secondary battery according to claim 10, wherein the electrolyte composition comprises iodine and an iodide.

### Claim 13 (depends on 12)

The secondary battery according to claim 12, wherein a concentration of the iodine in the electrolyte composition is from 0.01 to 5 mol/L and a concentration of the iodide is from 0.5 to 5 mol/L.

### Claim 14 (depends on 10)

The secondary battery according to claim 10, wherein the electrolyte composition comprises tertiary butyl pyridine.