# US 2013/0252002 A1 · Gas barrier film, method of producing a gas barrier film, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0252002 A1 - Document ID: US20130252002A1 - Status: Published application - Kind: A1 - Application number: 13/988,295 - Filed: 2011-11-18 - Published: 2013-09-26 - Earliest claimed: 2010-11-19 - Assignees: Konica Minolta, Inc. - Inventors: Issei Suzuki - Web page: https://patentgrep.com/patent/US20130252002A1 ## CPC - C08J 7/048: Forming gas barrier coatings - C08J 7/043: Improving the adhesiveness of the coatings per se, e.g. forming primers (adhesives in the form of films or foils characterised by the primer layers between the polymer carriers and the adhesives C09J7/50) - C08J 7/046: Forming abrasion-resistant coatings; Forming surface-hardening coatings - C08J 7/123: {Treatment by wave energy or particle radiation (C08J7/18 takes precedence)} - C23C 14/0652: {Silicon nitride} - C23C 14/0676: {Oxynitrides} - H05B 33/04: Sealing arrangements {, e.g. against humidity} - H10P 14/60: of insulating materials - H10P 14/63: {characterised by the formation processes} - H10P 14/6328: {Deposition from the gas or vapour phase} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10K 50/844: Encapsulations - C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon ox nitride which is formed on the first barrier layer. The ater vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is R1 and the water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R2, and the ratio of the water vapor transmission rate R1 to the water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less. Hereby, excellent, barrier performance can be exhibited under a high-temperature and high-humidity environment. ## Claims ### Claim 1 A gas barrier film comprising: a base; a first barrier layer containing silicon which is formed on at least one surface of the base; and a second barrier layer containing silicon oxynitride which is formed on the first barrier layer, wherein a ratio of a water vapor transmission rate R1 to a water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less, where a water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is represented as the R1, and a water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is represented as the R2. ### Claim 2 (depends on 1) The gas barrier film according to claim 1, wherein the water vapor transmission rate R1 is 1.0 (g/m2/day)≧R1≧1.0×10−3 (g/m2/day) and the water vapor transmission rate R2 is 1.0×10−3 (g/m2/day)>R2≧1.0×10−5 (g/m2/day). ### Claim 3 (depends on 1) The gas barrier film according to claim 1, wherein the first barrier layer is a silicon nitride film or a silicon oxynitride film formed by using, as a raw material, monosilane (SiH4) as the inorganic silicon compound and at least one gas selected from a group consisting of an ammonia gas, hydrogen gas, nitrogen gas, and nitrogen oxide gas. ### Claim 4 (depends on 1) The gas barrier film according to claim 1, wherein both of the first barrier layer and the second barrier layer are silicon oxynitride (SiON) films. ### Claim 5 A method of producing a gas barrier film in which a base; a first barrier layer containing silicon which is formed on at least one surface of the base by a plasma chemical vapor deposition method using at least an inorganic silicon compound as a raw material; and a second barrier layer containing silicon oxynitride, which is formed on the first barrier layer by applying an inorganic compound-containing liquid and subsequently being subjected to a modification treatment, are laminated in this order, wherein a ratio of a water vapor transmission rate R1 to a water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less, where a water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is represented as the R1, and a water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is represented as the R2. ### Claim 6 (depends on 5) The method of producing a gas barrier film according to claim 5, wherein the water vapor transmission rate R1 is 1.0 (g/m2/day)≧R1≧1.0×10−3 (g/m2/day) and the water vapor transmission rate R2 is 1.0×10−3 (g/m2/day)>R2≧1.0×10−5 (g/m2/day). ### Claim 7 (depends on 5) The method of producing a gas barrier film according to claim 5, wherein the first barrier layer is a silicon nitride film or a silicon oxynitride film formed by using, as a raw material, monosilane (SiH4) as the inorganic silicon compound and at least one gas selected from a group consisting of an ammonia gas, hydrogen gas, nitrogen gas, and nitrogen oxide gas. ### Claim 8 (depends on 5) The method of producing a gas barrier film according to claim 5, wherein both of the first barrier layer and the second barrier layer are silicon oxynitride (SiON) films. ### Claim 9 (depends on 1) An electronic device using the gas barrier film according to claim 1.