# US 2013/0251997 A1 · Barium titanate and electronic parts using the material

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- Number: US 2013/0251997 A1
- Document ID: US20130251997A1
- Status: Published application
- Kind: A1
- Application number: 13/895,412
- Filed: 2013-05-16
- Published: 2013-09-26
- Earliest claimed: 2002-02-24
- Assignees: Showa Denko K.K.
- Applicants: Showa Denko K.K.
- Inventors: Akihiko SHIRAKAWA; Hitoshi YOKOUCHI
- Web page: https://patentgrep.com/patent/US20130251997A1

## CPC

- C01F 11/02: Oxides or hydroxides (production of lime C04B2/00)
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- C01G 23/003: {Titanates (C01G23/001 takes precedence)}
- C01G 23/006: {Alkaline earth titanates}
- C04B 35/4682: {based on BaTiO3 perovskite phase}
- C04B 35/4684: {containing lead compounds (C04B35/472 takes precedence)}
- C04B 35/624: Sol-gel processing
- C04B 35/62605: {Treating the starting powders individually or as mixtures}
- C04B 35/62645: {Thermal treatment of powders or mixtures thereof other than sintering}
- C04B 35/62675: {characterised by the treatment temperature}
- H01G 4/1227: {based on alkaline earth titanates}
- H10N 30/8536: {Alkaline earth metal based oxides, e.g. barium titanates}
- C01P 2002/34: perovskite-type (ABO3)
- C01P 2002/77: by unit-cell parameters, atom positions or structure diagrams
- C01P 2002/82: by IR- or Raman-data
- C01P 2004/04: obtained by TEM, STEM, STM or AFM
- C01P 2004/64: Nanometer sized, i.e. from 1-100 nanometer
- C01P 2006/12: Surface area
- C01P 2006/13: thermal stability thereof at high temperatures
- C01P 2006/40: Electric properties
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3225: Yttrium oxide or oxide-forming salts thereof
- C04B 2235/3227: Lanthanum oxide or oxide-forming salts thereof
- C04B 2235/3229: Cerium oxides or oxide-forming salts thereof
- C04B 2235/3232: Titanium oxides or titanates, e.g. rutile or anatase
- C04B 2235/3236: Alkaline earth titanates
- C04B 2235/3244: Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
- C04B 2235/3251: Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B 2235/3258: Tungsten oxides, tungstates, or oxide-forming salts thereof
- C04B 2235/3262: Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- C04B 2235/3272: Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
- C04B 2235/3279: Nickel oxides, nickalates, or oxide-forming salts thereof
- C04B 2235/3281: Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3293: Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
- C04B 2235/3298: Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
- C04B 2235/3409: Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
- C04B 2235/3418: Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
- C04B 2235/3436: Alkaline earth metal silicates, e.g. barium silicate
- C04B 2235/449: Organic acids, e.g. EDTA, citrate, acetate, oxalate
- C04B 2235/5409: expressed by specific surface values
- C04B 2235/5445: submicron sized, i.e. from 0,1 to 1 micron
- C04B 2235/5454: nanometer sized, i.e. below 100 nm
- C04B 2235/6582: Hydrogen containing atmosphere
- C04B 2235/72: Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B 2235/761: Unit-cell parameters, e.g. lattice constants
- C04B 2235/768: Perovskite structure ABO3
- Y10T 428/2982: Particulate matter [e.g., sphere, flake, etc.]
- C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00})
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A process for producing a single crystal barium titanate including reacting a titanium oxide sol obtained by a wet process and a water-soluble barium compound under the presence of a basic compound in an aqueous reaction mixture at a pH of at least 11 to form a slurry containing barium titanate. The aqueous reaction mixture is subjected to a solid-liquid separation to separate the barium titanate from the slurry. The basic compound is removed as a gas from the barium titanate, and the barium titanate is fired at 300-1200° C.

## Claims

### Claim 1

A barium titanate, which is single crystal in the form of particles, wherein 20% or more of the total number of particles are particles without a void having a diameter of 1 nm or more.

### Claim 2 (depends on 1)

The barium titanate according to claim 1, wherein 50% or more of the total number of particles are particles without a void having a diameter of 1 nm or more.

### Claim 3 (depends on 1)

The barium titanate according to claim 1, wherein 80% or more of the total number of particles are particles without a void having a diameter of 1 nm or more.

### Claim 4 (depends on 1)

The barium titanate according to claim 1, wherein the particles have a BET specific surface area of 0.1 m2/g or more.

### Claim 5 (depends on 1)

The barium titanate according to claim 1, wherein no abrupt peak is defected at around 3500 cm−1 by infrared spectrum analysis of the particles after heat treatment thereof at 700° C.

### Claim 6 (depends on 1)

The barium titanate according to claim 1, comprising at least one element selected from the group consisting of Sn, Zr, Ca, Sr, Pb, Ho, Nd, Y, La, Ce, Mg, Bi, Ni, Al, Si, Zn, B, Nb, W, Mn, Fe, Cu, and Dy, said at least one element being in an amount of less than 5 mol % (0 mol % inclusive) on the basis of the entirety of BaTiO3.

### Claim 7 (depends on 1)

The barium titanate according to claim 1, which is in the form of powder.

### Claim 8 (depends on 1)

The barium titanate according to claim 1, which is synthesized by a wet process.

### Claim 9 (depends on 1)

A slurry comprising the barium titanate according to claim 1.

### Claim 10 (depends on 1)

A paste comprising the barium titanate according to claim 1.

### Claim 11 (depends on 1)

A dielectric material comprising barium titanate according to claim 1.

### Claim 12 (depends on 1)

A dielectric ceramic comprising barium titanate according to claim 1.

### Claim 13 (depends on 1)

A piezoelectric material comprising barium titanate according to claim 1.

### Claim 14 (depends on 1)

A piezoelectric ceramic material comprising barium titanate according to claim 1.

### Claim 15 (depends on 1)

A dielectric film material comprising barium titanate according to claim 1.

### Claim 16 (depends on 11)

A capacitor comprising the dielectric material according to claim 11.

### Claim 17 (depends on 13)

A capacitor comprising the piezoelectric material according to claim 13.

### Claim 18 (depends on 15)

A capacitor comprising the dielectric film according to claim 15.

### Claim 19 (depends on 15)

An integrated capacitor comprising the dielectric film according to claim 15.

### Claim 20 (depends on 15)

A printed board comprising the dielectric film according to claim 15.

### Claim 21 (depends on 16)

An electronic equipment comprising the capacitor according to claim 16.