# US 2013/0251978 A1 · Method for Pore Sealing of Porous Materials Using Polyimide Langmuir-Blodgett Film

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- Number: US 2013/0251978 A1
- Document ID: US20130251978A1
- Status: Published application
- Kind: A1
- Application number: 13/847,457
- Filed: 2013-03-19
- Published: 2013-09-26
- Earliest claimed: 2012-03-20
- Assignees: St. Petersburg Electrotechnical University; Imec
- Applicants: Imec; St. Petersburg Electrotechnical University
- Inventors: Victor Luchinin; Svetlana Goloudina; Vyacheslav Pasyuta; Alexey Ivanov; Mikhail Baklanov; Mikhail Krishtab
- Web page: https://patentgrep.com/patent/US20130251978A1

## CPC

- C08J 5/18: Manufacture of films or sheets
- B05D 1/204: {LB techniques}
- B05D 1/208: {After-treatment of monomolecular films}
- B32B 18/00: Layered products essentially comprising ceramics, e.g. refractory products
- B32B 27/04: as impregnant, bonding, or embedding substance {(not used)}
- B32B 27/281: {comprising polyimides}
- B32B 37/15: with at least one layer being manufactured and immediately laminated before reaching its stable state, e.g. in which a layer is extruded and laminated while in semi-molten state
- C08G 73/1067: {Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound}
- C09D 179/08: Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- H05K 1/03: Use of materials for the substrate
- H05K 3/143: {Masks therefor (H05K3/048 takes precedence)}
- H10P 14/6344: {using Langmuir-Blodgett techniques}
- H10P 14/6516: {of treatments performed after formation of the materials}
- H10W 20/48: Insulating materials thereof
- B05D 1/20: substances to be applied floating on a fluid
- B05D 2505/50: Polyimides
- B32B 2260/046: Synthetic resin
- B32B 2305/026: Porous
- B32B 2305/07: Parts immersed or impregnated in a matrix
- B32B 2307/00: Properties of the layers or laminate
- B32B 2307/204: Di-electric
- B32B 2379/08: Polyimides
- B32B 2457/00: Electrical equipment
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C08J 2379/08: Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08J 2483/02: Polysilicates
- H05K 2201/01: Dielectrics
- H05K 2201/0104: Properties and characteristics in general
- H05K 2201/0116: Porous, e.g. foam
- H05K 2201/0154: Polyimide
- H05K 2201/0162: Silicon containing polymer, e.g. silicone
- Y10T 428/249979: Specified thickness of void-containing component [absolute or relative] or numerical cell dimension
- Y10T 428/249991: Synthetic resin or natural rubbers
- C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29)
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Method for pore sealing a porous substrate, comprising: forming a continuous monolayer of a polyimide precursor on a liquid surface, transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique, and imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate. Porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

## Claims

### Claim 1

A method for pore sealing a porous substrate, comprising:
(a) forming a continuous monolayer of a polyimide precursor on a liquid surface; and
(b) transferring said polyimide precursor monolayer onto the porous substrate with the Langmuir-Blodgett technique;
and further comprising:
(c) imidization of the transferred polyimide precursor monolayers, thereby forming a polyimide sealing layer on the porous substrate.

### Claim 2 (depends on 1)

The method according to claim 1, wherein both forming said continuous monolayer of said polyimide precursor on the liquid surface and transferring said polyimide precursor monolayer onto the porous substrate with said Langmuir-Blodgett technique are repeated a number of times, so that said sealing layer on said porous substrate comprises a plurality of said monolayers.

### Claim 3 (depends on 2)

The method according to claim 2, wherein said sealing layer has a thickness lower than 5 nm.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the polyimide precursor is polyamic acid alkylamine salt.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the porous substrate is an ultra-low κ dielectric material having a dielectric constant κ lower than 2.3.

### Claim 6 (depends on 5)

The method according to claim 5, wherein the dielectric constant κ is lower than 2.1.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the porous substrate is a porous dielectric having a pore size of 1 to 5 nm.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the porous substrate is a porous organosilicate.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the porous organosilicate comprises SiOCH material having a κ-value of 2.3 and an average pore size of 2 nm.

### Claim 10

A porous substrate having at least one surface on which a sealing layer is provided to seal pores of the substrate, wherein the sealing layer is a polyimide having a thickness of a few monolayers and wherein there is no penetration of the polyimide into the pores.

### Claim 11 (depends on 10)

The porous substrate of claim 10, wherein the substrate is an ultra-low κ dielectric material having a dielectric constant κ lower than 2.3.

### Claim 12 (depends on 11)

The porous substrate of claim 11, wherein the dielectric constant κ is lower than 2.1.

### Claim 13 (depends on 10)

The porous substrate of claim 10, wherein the substrate is a porous dielectric having a pore size of 1 to 5 nm.

### Claim 14 (depends on 10)

The porous substrate of claim 10, wherein the substrate is a porous organosilicate,

### Claim 15 (depends on 14)

The porous substrate of claim 14, wherein the organosilicate comprises SiOCH material having a κ-value of 2.3 and an average pore size of 2 nm.

### Claim 16 (depends on 10)

The porous substrate of claim 10, wherein the sealing layer has a thickness lower than 5 nm.